类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 800 V |
电流 - 连续漏极 (id) @ 25°c: | 4.3A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 2.5Ohm @ 3.25A, 10V |
vgs(th) (最大值) @ id: | 4V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 36 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 710 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 2W (Ta), 36W (Tc) |
工作温度: | 150°C |
安装类型: | Through Hole |
供应商设备包: | TO-220FI(LS) |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
APT12060LVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 20A TO264 |
|
PMV37EN,215Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
STU6N60M2STMicroelectronics |
MOSFET N-CH 600V 4.5A IPAK |
|
SIHD2N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 2.8A DPAK |
|
FK3503010LPanasonic |
MOSFET N-CH 30V 100MA SMINI3 |
|
STP30NF20STMicroelectronics |
MOSFET N-CH 200V 30A TO220AB |
|
IPP16CN10NGHKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 53A TO220-3 |
|
SISH101DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 16.9A/35A PPAK |
|
CSD17506Q5ATexas Instruments |
MOSFET N-CH 30V 100A 8VSON |
|
RM5N60S4Rectron USA |
MOSFET N-CHANNEL 60V 5A SOT223-3 |
|
IPT60R105CFD7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 24A 8HSOF |
|
AUIRFSL8405Rochester Electronics |
MOSFET N-CH 40V 120A TO262 |
|
2SK3707-1ERochester Electronics |
MOSFET N-CH 100V 20A TO220F-3SG |