English
简体中文
MOSFET N-CH 100V 20A TO220F-3SG
OPTOISO 4.17KV OPN COLL 6SMD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 10V |
| rds on (max) @ id, vgs: | 60mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | 44 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2150 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2W (Ta), 25W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220F-3SG |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDN358PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 1.5A SUPERSOT3 |
|
STW12N120K5STMicroelectronics |
MOSFET N-CH 1200V 12A TO247 |
|
IRFW540ATMRochester Electronics |
MOSFET N-CH 100V 28A D2PAK |
|
IRFPG50PBFVishay / Siliconix |
MOSFET N-CH 1000V 6.1A TO247-3 |
|
IRFBF20STRRPBFVishay / Siliconix |
MOSFET N-CH 900V 1.7A D2PAK |
|
STB46N30M5STMicroelectronics |
MOSFET N-CH 300V 53A D2PAK |
|
DMN10H170SFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V PWRDI3333 |
|
BUK7M33-60EXNexperia |
MOSFET N-CH 60V 24A LFPAK33 |
|
FDD13AN06A0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 9.9A/50A DPAK |
|
IPB049N08N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 80A D2PAK |
|
PMV20XN,215Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
BUK964R2-60E,118Nexperia |
MOSFET N-CH 60V 100A D2PAK |
|
PSMN013-100YSEXNexperia |
MOSFET N-CH 100V 82A LFPAK56 |