类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 82A (Tj) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 13mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 4V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 75 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3775 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 238W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | LFPAK56, Power-SO8 |
包/箱: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IRLL014TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 60V 2.7A SOT223 |
![]() |
RZF020P01TLROHM Semiconductor |
MOSFET P-CH 12V 2A TUMT3 |
![]() |
IRF9540STRLPBFVishay / Siliconix |
MOSFET P-CH 100V 19A D2PAK |
![]() |
STP260N6F6STMicroelectronics |
MOSFET N-CH 60V 120A TO220 |
![]() |
FDD26AN06A0-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 7A/36A TO252AA |
![]() |
TN0104N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 40V 630MA TO243AA |
![]() |
MTD15N06V1Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
NTE2384NTE Electronics, Inc. |
MOSFET N-CHANNEL 900V 6A TO3 |
![]() |
NTTFS4C65NTAGRochester Electronics |
MOSFET N-CH 30V 27A 8WDFN |
![]() |
IRFH7545TRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 85A PQFN |
![]() |
DMTH6005LPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 100A PWRDI5060 |
![]() |
HUF75333S3Rochester Electronics |
MOSFET N-CH 55V 66A I2PAK |
![]() |
PSMN050-80BS,118Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |