English
简体中文
SWITCH TOGGLE DPDT 0.4VA 28V
MOSFET N-CH 60V 120A TO220
MOSFET N-CHANNEL 900V 6A TO3
DIODE SCHOTTKY 100V 3A DO214AB
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | DeepGATE™, STripFET™ VI |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3mOhm @ 60A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 183 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 11400 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDD26AN06A0-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 7A/36A TO252AA |
|
TN0104N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 40V 630MA TO243AA |
|
MTD15N06V1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NTE2384NTE Electronics, Inc. |
MOSFET N-CHANNEL 900V 6A TO3 |
|
NTTFS4C65NTAGRochester Electronics |
MOSFET N-CH 30V 27A 8WDFN |
|
IRFH7545TRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 85A PQFN |
|
DMTH6005LPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 100A PWRDI5060 |
|
HUF75333S3Rochester Electronics |
MOSFET N-CH 55V 66A I2PAK |
|
PSMN050-80BS,118Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
NVMFS6D1N08HT1GSanyo Semiconductor/ON Semiconductor |
T8 80V |
|
NTB45N06T4Rochester Electronics |
MOSFET N-CH 60V 45A D2PAK |
|
BUK661R6-30C,118Nexperia |
MOSFET N-CH 30V 120A D2PAK |
|
SI2310B-TPMicro Commercial Components (MCC) |
MOSFET N-CH 60V 3A SOT23 |