类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 3A (Tj) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 105mOhm @ 3A, 10V |
vgs(th) (最大值) @ id: | 1.3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 6 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 247 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 1.2W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23 |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
HAT2165N-EL-ERochester Electronics |
MOSFET N-CH 30V 55A 8LFPAK |
|
IRFSL7537PBFRochester Electronics |
MOSFET N-CH 60V 173A TO262 |
|
DMN2058UW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 3.5A SOT323 T&R |
|
IPW65R150CFDAFKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 22.4A TO247-3 |
|
SSM6K781G,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 12V 7A 6WCSP6C |
|
RJK0355DPA-01#J0BRochester Electronics |
MOSFET N-CH 30V 30A 8WPAK |
|
CMSN3416K-HFComchip Technology |
MOSFET N-CH 20V 7A SOT23 |
|
IAUC120N04S6N010ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 150A TDSON-8-34 |
|
IRFH9310TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 21A/40A PQFN |
|
RM16P60LDRectron USA |
MOSFET P-CHANNEL 60V 16A TO252-2 |
|
FDP24N40Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 24A TO220-3 |
|
DMN3025LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N CH 30V 7.2A 8-SO |
|
IRFR010TRPBFVishay / Siliconix |
MOSFET N-CH 50V 8.2A DPAK |