类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 250 V |
电流 - 连续漏极 (id) @ 25°c: | 14A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 280mOhm @ 8.4A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 68 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1300 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.1W (Ta), 125W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PXP018-20QXJNexperia |
PXP018-20QX/SOT8002/MLPAK33 |
|
IRF1404ZSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 180A D2PAK |
|
MMFTP3401Diotec Semiconductor |
MOSFET P-CH 30V 3A SOT23-3 |
|
DMT6017LFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 65V 8.1A 6UDFN |
|
IRLR2905TRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 42A DPAK |
|
AUIRFN7107TRRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
AOK18N65LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 18A TO247 |
|
IRFP3077PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 120A TO247AC |
|
STW48NM60NSTMicroelectronics |
MOSFET N-CH 600V 44A TO247 |
|
IPW80R290C3AXKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 17A TO247-3 |
|
SPP11N60C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO220-3 |
|
TSM2306CX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 30V 3.5A SOT23 |
|
NP180N04TUK-E1-AYRenesas Electronics America |
MOSFET N-CH 40V 180A TO263-7 |