English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 22.4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 150mOhm @ 9.3A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 86 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2340 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 34.7W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220 Full Pack |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDN336PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 1.3A SUPERSOT3 |
|
MCH6337-TL-WRochester Electronics |
MOSFET P-CH 20V 4.5A 6MCPH |
|
PSMN5R6-100BS,118Nexperia |
MOSFET N-CH 100V 100A D2PAK |
|
FDMS86102LZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 7A/22A 8PQFN |
|
STB13N60M2STMicroelectronics |
MOSFET N-CH 600V 11A D2PAK |
|
TJ40S04M3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 40A DPAK |
|
SIHB30N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 29A D2PAK |
|
AOTF7N70Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 7A TO220-3F |
|
IPD031N06L3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 100A TO252-3 |
|
BSC096N10LS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 40A TDSON-8-6 |
|
IRFR2307ZPBFRochester Electronics |
MOSFET N-CH 75V 42A DPAK |
|
SI3421DV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 8A 6TSOP |
|
BSC079N03LSCGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 14A/50A TDSON |
