类型 | 描述 |
---|---|
系列: | STripFET™ II |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 70A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 5V, 10V |
rds on (max) @ id, vgs: | 9.5mOhm @ 35A, 10V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 30 nC @ 5 V |
vgs (最大值): | ±18V |
输入电容 (ciss) (max) @ vds: | 1440 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 100W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ATP101-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 25A ATPAK |
|
CSD22205LTexas Instruments |
MOSFET P-CH 8V 7.4A 4PICOSTAR |
|
IRL2910STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 55A D2PAK |
|
FDB42AN15A0-F085Rochester Electronics |
MOSFET N-CH 150V 35A D2PAK |
|
IPD135N03LGRochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
IXTA6N50D2-TRLWickmann / Littelfuse |
MOSFET N-CH 500V 6A TO263 |
|
APT30M19JVRRoving Networks / Microchip Technology |
MOSFET N-CH 300V 130A ISOTOP |
|
FDMC7678Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 17.5A/19.5A 8MLP |
|
NTP18N06LRochester Electronics |
MOSFET N-CH 60V 15A TO220AB |
|
AOSP21307Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 14A 8SOIC |
|
STH175N4F6-2AGSTMicroelectronics |
MOSFET N-CH 40V 120A H2PAK-2 |
|
FQPF6N40CFRochester Electronics |
MOSFET N-CH 400V 6A TO220F |
|
SUP10250E-GE3Vishay / Siliconix |
MOSFET N-CH 250V 63A TO220AB |