English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 28A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 20mOhm @ 20A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 12.3 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 961 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SOP |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RF1S540SMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIA462DJ-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK SC70-6 |
|
IRFI530GPBFVishay / Siliconix |
MOSFET N-CH 100V 9.7A TO220-3 |
|
FQPF19N10LRochester Electronics |
MOSFET N-CH 100V 13.6A TO220F |
|
NTMTS0D7N04CTXGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 65A/420A 8DFNW |
|
IXFH16N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 16A TO247AD |
|
SSM6J207FE,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 1.4A ES6 |
|
ZXMP7A17GQTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 70V 2.6A SOT223 |
|
RV2C001ZPT2LROHM Semiconductor |
MOSFET P-CH 20V 100MA DFN1006-3 |
|
RTQ035P02HZGTRROHM Semiconductor |
MOSFET P-CH 20V 3.5A TSMT6 |
|
IXTT2N170D2Wickmann / Littelfuse |
MOSFET N-CH 1700V 2A TO268 |
|
XPN9R614MC,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 40A 8TSON |
|
BSP320SL6327Rochester Electronics |
SMALL-SIGNAL N-CHANNEL MOSFET |
