类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 700mA (Ta), 1.4A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 1.5Ohm @ 700mA, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 4.5 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 159 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 1.7W (Ta), 16.2W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | LFPAK33 |
包/箱: | SOT-1210, 8-LFPAK33 (5-Lead) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPA60R190E6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 20.2A TO220-FP |
|
IPP120N06NGAKSA1Rochester Electronics |
MOSFET N-CH 60V 75A TO220-3 |
|
FDD6776ARochester Electronics |
MOSFET N-CH 25V 17.7A/30A DPAK |
|
C3M0120065KWolfspeed - a Cree company |
650V 120M SIC MOSFET |
|
NTD4965NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13A/68A DPAK-3 |
|
CSD17322Q5ATexas Instruments |
MOSFET N-CH 30V 87A 8VSON |
|
AUIRF2907ZS7PTLRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
SUD40N10-25-T4-E3Vishay / Siliconix |
MOSFET N-CH 100V 40A TO252 |
|
IPW65R420CFDFKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 8.7A TO247-3 |
|
AON7422GAlpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 30V 32A 8DFN |
|
CSD17303Q5Texas Instruments |
MOSFET N-CH 30V 32A/100A 8VSON |
|
STB4NK60ZT4STMicroelectronics |
MOSFET N-CH 600V 4A D2PAK |
|
SIS110DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 5.2A/14.2A PPAK |