English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NexFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 32A (Ta), 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 3V, 8V |
| rds on (max) @ id, vgs: | 2.4mOhm @ 25A, 8V |
| vgs(th) (最大值) @ id: | 1.6V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 23 nC @ 4.5 V |
| vgs (最大值): | +10V, -8V |
| 输入电容 (ciss) (max) @ vds: | 3420 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.2W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-VSON-CLIP (5x6) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STB4NK60ZT4STMicroelectronics |
MOSFET N-CH 600V 4A D2PAK |
|
SIS110DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 5.2A/14.2A PPAK |
|
IXFN64N60PWickmann / Littelfuse |
MOSFET N-CH 600V 50A SOT227B |
|
BSC076N06NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 50A TDSON-8 |
|
FDMS86252LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 4.4A 8PQFN |
|
AOD5N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 5A TO252 |
|
RM8N650IPRectron USA |
MOSFET N-CHANNEL 650V 8A TO251 |
|
SUD15N15-95-BE3Vishay / Siliconix |
MOSFET N-CH 150V 15A DPAK |
|
STP7N65M2STMicroelectronics |
MOSFET N-CH 650V 5A TO220 |
|
STF12NK80ZSTMicroelectronics |
MOSFET N-CH 800V 10.5A TO220FP |
|
IRF9317TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 16A 8SO |
|
FDD2582Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 3.7/21A TO252AA |
|
DMTH6010SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V PWRDI5060 |
