English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13.5A (Ta), 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 8mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 38.1 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2841 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.6W (Ta), 167W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerDI5060-8 |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SUD35N10-26P-T4GE3Vishay / Siliconix |
MOSFET N-CH 100V 35A TO252 |
|
IPD60R800CEATMA1Rochester Electronics |
MOSFET N-CH 600V 5.6A TO252-3 |
|
STB55NF03LT4STMicroelectronics |
MOSFET N-CH 30V 55A D2PAK |
|
NVMYS5D3N04CTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 19A/71A 4LFPAK |
|
SPP20N60S5XKSA1IR (Infineon Technologies) |
HIGH POWER_LEGACY |
|
IPSA70R1K4P7SAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 4A TO251-3 |
|
FDMC8321LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 22A/49A POWER33 |
|
DMN3009SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 15A 8SO T&R 2 |
|
IRFR9210TRLPBFVishay / Siliconix |
MOSFET P-CH 200V 1.9A DPAK |
|
IRFR214TRPBFVishay / Siliconix |
MOSFET N-CH 250V 2.2A DPAK |
|
IPD95R750P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 9A TO252-3 |
|
FDS6670ASRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
CSD16406Q3Texas Instruments |
MOSFET N-CH 25V 19A/60A 8VSON |
