English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | STripFET™ III |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 46A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 9.6mOhm @ 23A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 57 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3305 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 35W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220FP |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMN2300UFB-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 1.32A 3DFN |
|
STP15N65M5STMicroelectronics |
MOSFET N CH 650V 11A TO220 |
|
FDP8870Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
2SK3541T2LROHM Semiconductor |
MOSFET N-CH 30V 100MA VMT3 |
|
IXTA90N20X3Wickmann / Littelfuse |
MOSFET N-CH 200V 90A TO263 |
|
PHB29N08T,118Nexperia |
MOSFET N-CH 75V 27A D2PAK |
|
DMTH6005LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 19.7A/100A PWRDI |
|
APT40M35JVRRoving Networks / Microchip Technology |
MOSFET N-CH 400V 93A SOT227 |
|
IRFS38N20DPBFRochester Electronics |
IRFS38N20D - 20V-30V N-CHANNEL |
|
IXTT1N250HVWickmann / Littelfuse |
MOSFET N-CH 2500V 1.5A TO268 |
|
IXTH86N20TWickmann / Littelfuse |
MOSFET N-CH 200V 86A TO247 |
|
IGW40N60TPRochester Electronics |
IGW40N60 - DISCRETE IGBT WITHOUT |
|
SIHB25N50E-GE3Vishay / Siliconix |
MOSFET N-CH 500V 26A TO263 |
