FUSE BOARD MNT 1A 250VAC RADIAL
20V UNIDIRECTIONAL SURGE
IGW40N60 - DISCRETE IGBT WITHOUT
类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SIHB25N50E-GE3Vishay / Siliconix |
MOSFET N-CH 500V 26A TO263 |
|
R6012JNJGTLROHM Semiconductor |
MOSFET N-CH 600V 12A LPTS |
|
CSD19532Q5BTTexas Instruments |
MOSFET N-CH 100V 100A 8VSON |
|
IRLU110PBFVishay / Siliconix |
MOSFET N-CH 100V 4.3A TO251AA |
|
FDD6670SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDPF12N50UTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 10A TO220F |
|
IRFR1N60ATRPBFVishay / Siliconix |
MOSFET N-CH 600V 1.4A DPAK |
|
IXTT26N50PWickmann / Littelfuse |
MOSFET N-CH 500V 26A TO268 |
|
RW1C025ZPT2CRROHM Semiconductor |
MOSFET P-CH 20V 2.5A 6WEMT |
|
IRFU3607PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 56A IPAK |
|
VP0104N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 40V 250MA TO92-3 |
|
AOWF11N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO262F |
|
NVMYS2D2N06CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 31A/185A LFPAK4 |