English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 7Ohm @ 840mA, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 14 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 229 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 36W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXTT26N50PWickmann / Littelfuse |
MOSFET N-CH 500V 26A TO268 |
|
RW1C025ZPT2CRROHM Semiconductor |
MOSFET P-CH 20V 2.5A 6WEMT |
|
IRFU3607PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 56A IPAK |
|
VP0104N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 40V 250MA TO92-3 |
|
AOWF11N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO262F |
|
NVMYS2D2N06CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 31A/185A LFPAK4 |
|
BUK7513-75B,127Rochester Electronics |
PFET, 75A I(D), 75V, 0.013OHM, 1 |
|
NVMFS5C628NLAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 28A/150A 5DFN |
|
IPD30N06S2L-23Rochester Electronics |
IPD30N06 - 55V-60V N-CHANNEL AUT |
|
STP11N65M5STMicroelectronics |
MOSFET N-CH 650V 9A TO220 |
|
FQP6N60CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 5.5A TO220-3 |
|
NDD05N50ZT4GRochester Electronics |
MOSFET N-CH 500V 4.7A DPAK |
|
BSH111BKRNexperia |
MOSFET N-CH 55V 210MA TO236AB |
