English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 13mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 40 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2.644 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 157W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVMFS5C628NLAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 28A/150A 5DFN |
|
IPD30N06S2L-23Rochester Electronics |
IPD30N06 - 55V-60V N-CHANNEL AUT |
|
STP11N65M5STMicroelectronics |
MOSFET N-CH 650V 9A TO220 |
|
FQP6N60CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 5.5A TO220-3 |
|
NDD05N50ZT4GRochester Electronics |
MOSFET N-CH 500V 4.7A DPAK |
|
BSH111BKRNexperia |
MOSFET N-CH 55V 210MA TO236AB |
|
DMP3028LFDE-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 6.8A 6UDFN |
|
DMT10H009LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 13A/48A 8SO T&R |
|
IRFZ10PBFVishay / Siliconix |
MOSFET N-CH 60V 10A TO220AB |
|
SI2365EDS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 5.9A TO236 |
|
IPB600N25N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 250V 25A D2PAK |
|
2SK1447LSRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
CSD18535KTTTexas Instruments |
MOSFET N-CH 60V 200A DDPAK |
