English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 290mOhm @ 2A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 5.4 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 355 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.3W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SC-70-6 (SOT-363) |
| 包/箱: | 6-TSSOP, SC-88, SOT-363 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDP2710-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 4A TO220-3 |
|
NTD3055L104-1GRochester Electronics |
SINGLE N-CHANNEL LOGIC LEVEL POW |
|
IGT60R190D1SATMA1IR (Infineon Technologies) |
GANFET N-CH 600V 12.5A 8HSOF |
|
PMV65UNERNexperia |
MOSFET N-CH 20V 2.8A TO236AB |
|
SIE820DF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 50A 10POLARPAK |
|
MCH6344-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 2A 6MCPH |
|
NDD04N50Z-1GRochester Electronics |
MOSFET N-CH 500V 3A IPAK |
|
TPC8092,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 15A 8SOP |
|
DMP3099L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 3.8A SOT23 |
|
IPI65R110CFDRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSC022N04LS6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 27A/100A TDSON |
|
FQU2N60TURochester Electronics |
MOSFET N-CH 600V 2A IPAK |
|
AO3421EAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 3A SOT23-3L |
