







0.8A, 45V, PNP
MOSFET N-CH 700V 12A TO220F
GRAVITY: I2C OXYGEN SENSOR
INSULATION DISPLACEMENT TERMINAL
| 类型 | 描述 |
|---|---|
| 系列: | aMOS5™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 700 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Tj) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 360mOhm @ 6A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 22.5 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1360 pF @ 100 V |
| 场效应管特征: | - |
| 功耗(最大值): | 29.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220F |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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