English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | DTMOSIV |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.8A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.05Ohm @ 2.9A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 180µA |
| 栅极电荷 (qg) (max) @ vgs: | 11 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 390 pF @ 300 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 60W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I-PAK |
| 包/箱: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STP40NF12STMicroelectronics |
MOSFET N-CH 120V 40A TO220AB |
|
3LP01M-TL-HRochester Electronics |
MOSFET P-CH 30V 100MA 3MCP |
|
NTTFS4941NTAGRochester Electronics |
MOSFET N-CH 30V 8.3A/46A 8WDFN |
|
RM3139KRectron USA |
MOSFET P-CH 20V 660MA SOT723 |
|
NVD5117PLT4GRochester Electronics |
MOSFET P-CH 60V 11A/61A DPAK |
|
BSC016N06NSTATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 31A/100A TDSON |
|
AON6414AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 13A/30A 8DFN |
|
FDMS8672SRochester Electronics |
MOSFET N-CH 30V 17A/35A 8PQFN |
|
IRFP150MPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 42A TO247AC |
|
SIHA22N60AE-E3Vishay / Siliconix |
MOSFET N-CHANNEL 600V 20A TO220 |
|
AOW10N65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 10A TO262 |
|
IPA50R800CERochester Electronics |
MOSFET N-CH 500V 5A TO220-FP |
|
IRF630STRLPBFVishay / Siliconix |
MOSFET N-CH 200V 9A D2PAK |
