类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 62A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 42mOhm @ 31A, 10V |
vgs(th) (最大值) @ id: | 4.75V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 99 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 4360 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 390W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247-4 |
包/箱: | TO-247-4 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AON6588Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 32A/32A 8DFN |
|
IPD80N06S3-09Rochester Electronics |
MOSFET N-CH 55V 80A TO252-3 |
|
IRFR9310TRLPBF-BE3Vishay / Siliconix |
MOSFET P-CH 400V 1.8A DPAK |
|
STL16N65M5STMicroelectronics |
MOSFET N-CH 650V 12A PWRFLAT HV |
|
XP261N7002TR-GTorex Semiconductor Ltd. |
MOSFET N-CH 60V 150MA SOT23 |
|
NTMFS4C08NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9A/52A 5DFN |
|
2SK3980-TD-ERochester Electronics |
N-CHANNEL MOSFET |
|
SIR846ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
|
DMTH6010SK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 16.3A/70A TO252 |
|
IXFK360N15T2Wickmann / Littelfuse |
MOSFET N-CH 150V 360A TO264AA |
|
IPI90R800C3Rochester Electronics |
MOSFET N-CH 900V 6.9A TO262-3 |
|
PSMN012-60MSXNexperia |
MOSFET N-CH 60V 53A LFPAK33 |
|
IRFB17N50LPBFVishay / Siliconix |
MOSFET N-CH 500V 16A TO220AB |