类型 | 描述 |
---|---|
系列: | SuperMESH5™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 800 V |
电流 - 连续漏极 (id) @ 25°c: | 3.6A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.2Ohm @ 3A, 10V |
vgs(th) (最大值) @ id: | 5V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 13.4 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 360 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 42W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerFlat™ (5x6) |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STF4N90K5STMicroelectronics |
MOSFET N-CH 900V 4A TO220FP |
|
NVTFS4C06NWFTWGRochester Electronics |
MOSFET N-CH 30V 21A 8WDFN |
|
SPW17N80C3FKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 17A TO247-3 |
|
LND150N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3 |
|
STD15NF10T4STMicroelectronics |
MOSFET N-CH 100V 23A DPAK |
|
STL11N65M5STMicroelectronics |
MOSFET N-CH 650V 8.5A POWERFLAT |
|
SIHA120N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 25A TO220 |
|
HUF75345S3ST_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK03B8DPA-00#J53Rochester Electronics |
MOSFET N-CH 30V 30A 8WPAK |
|
IRF3717TRPBFRochester Electronics |
PFET, 20A I(D), 20V, 0.0044OHM, |
|
SI7370DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 60V 9.6A PPAK SO-8 |
|
STP35N60DM2STMicroelectronics |
MOSFET N-CH 600V 28A TO220 |
|
FQA12N60Rochester Electronics |
MOSFET N-CH 600V 12A TO3P |