English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 110mOhm @ 4.5A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 17.2 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 969 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.97W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | U-DFN2020-6 (Type F) |
| 包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STWA63N65DM2STMicroelectronics |
MOSFET N-CH 650V 60A TO247 |
|
SIHP12N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 12A TO220AB |
|
IPI50R350CPRochester Electronics |
MOSFET N-CH 550V 10A TO262-3 |
|
PMV30UN2VLNexperia |
MOSFET N-CH 20V 5.4A TO236AB |
|
IRF7483MTRPBFRochester Electronics |
MOSFET N-CH 40V 135A DIRECTFET |
|
CSD19501KCSTexas Instruments |
MOSFET N-CH 80V 100A TO220-3 |
|
TPIC1502DWRRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SI7716ADN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 16A PPAK1212-8 |
|
SI2304BDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 2.6A SOT23-3 |
|
PMPB14XPXNexperia |
MOSFET DFN2020MD-6 |
|
VN2106N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 60V 300MA TO92-3 |
|
RM50N60IPRectron USA |
MOSFET N-CHANNEL 60V 50A TO251 |
|
PSMN2R5-60PLQNexperia |
MOSFET N-CH 60V 150A TO220AB |
