RES 0.091 OHM 1% 1W 2512
CAP CER 680PF 4KV C0G/NP0 2220
MOSFET N-CH 650V 63A TO247-3
类型 | 描述 |
---|---|
系列: | MDmesh™ M2 |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 63A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 46mOhm @ 31.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 117 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 5140 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 446W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247-3 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
FCP600N65S3R0Rochester Electronics |
MOSFET N-CH 650V 6A TO220-3 |
![]() |
AOT12N30LAlpha and Omega Semiconductor, Inc. |
MOSFET N CH 300V 11.5A TO220 |
![]() |
SIJA52DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
![]() |
NTE2933NTE Electronics, Inc. |
MOSFET N-CHANNEL 400V 8A TO3PML |
![]() |
IRFU9220PBFVishay / Siliconix |
MOSFET P-CH 200V 3.6A TO251AA |
![]() |
IRF8113GPBFRochester Electronics |
MOSFET N-CH 30V 17.2A 8SO |
![]() |
MMSF10N03ZR2Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
![]() |
IPD60R520CPBTMA1Rochester Electronics |
MOSFET N-CH 600V 6.8A TO252-3 |
![]() |
2SK2371-ARochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
IRFS7530PBFRochester Electronics |
MOSFET N-CH 60V 195A D2PAK |
![]() |
CSD17579Q3ATTexas Instruments |
MOSFET N-CH 30V 20A 8VSON |
![]() |
SUD19P06-60-E3Vishay / Siliconix |
MOSFET P-CH 60V 18.3A TO252 |
![]() |
RM27P30LDVRectron USA |
MOSFET P-CHANNEL 30V 27A TO252-2 |