English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bag |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 400 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 550mOhm @ 4A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 75 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1530 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 85W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-3PML |
| 包/箱: | TO-3P-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFU9220PBFVishay / Siliconix |
MOSFET P-CH 200V 3.6A TO251AA |
|
IRF8113GPBFRochester Electronics |
MOSFET N-CH 30V 17.2A 8SO |
|
MMSF10N03ZR2Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IPD60R520CPBTMA1Rochester Electronics |
MOSFET N-CH 600V 6.8A TO252-3 |
|
2SK2371-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFS7530PBFRochester Electronics |
MOSFET N-CH 60V 195A D2PAK |
|
CSD17579Q3ATTexas Instruments |
MOSFET N-CH 30V 20A 8VSON |
|
SUD19P06-60-E3Vishay / Siliconix |
MOSFET P-CH 60V 18.3A TO252 |
|
RM27P30LDVRectron USA |
MOSFET P-CHANNEL 30V 27A TO252-2 |
|
IPD30N06S223ATMA2Rochester Electronics |
MOSFET N-CH 55V 30A TO252-3-11 |
|
IRLL024ZTRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 5A SOT223 |
|
PXN7R7-25QLJNexperia |
PXN7R7-25QL/SOT8002/MLPAK33 |
|
SI3139KE-TPMicro Commercial Components (MCC) |
MOSFET P-CH 20V 660MA SOT523 |
