CAP TANT 4.7UF 10% 35V 2917
MOSFET N-CH 55V 5A SOT223
CIRCULAR
类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 55 V |
电流 - 连续漏极 (id) @ 25°c: | 5A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 60mOhm @ 3A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 11 nC @ 5 V |
vgs (最大值): | ±16V |
输入电容 (ciss) (max) @ vds: | 380 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 1W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-223 |
包/箱: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PXN7R7-25QLJNexperia |
PXN7R7-25QL/SOT8002/MLPAK33 |
|
SI3139KE-TPMicro Commercial Components (MCC) |
MOSFET P-CH 20V 660MA SOT523 |
|
STB18NM60NDSTMicroelectronics |
MOSFET N-CH 600V 13A D2PAK |
|
STP110N10F7STMicroelectronics |
MOSFET N CH 100V 110A TO-220 |
|
SIHB10N40D-GE3Vishay / Siliconix |
MOSFET N-CH 400V 10A TO263 |
|
IXTT10N100DWickmann / Littelfuse |
MOSFET N-CH 1000V 10A TO268 |
|
IRFR120NTRRPBFRochester Electronics |
MOSFET N-CH 100V 9.4A DPAK |
|
SQ7414AEN-T1_BE3Vishay / Siliconix |
MOSFET N-CH 60V 5.6A PPAK 1212-8 |
|
STB8NM60DSTMicroelectronics |
MOSFET N-CH 600V 8A D2PAK |
|
AOTF2142LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 112A TO220F |
|
IRFP140NPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 33A TO247AC |
|
MMFTN3018WDiotec Semiconductor |
MOSFET N-CH 30V 100MA SOT323 |
|
FDC637ANSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 6.2A SUPERSOT6 |