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| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1Ohm @ 2.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 380 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 100W (Tc) |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AOTF2142LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 112A TO220F |
|
IRFP140NPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 33A TO247AC |
|
MMFTN3018WDiotec Semiconductor |
MOSFET N-CH 30V 100MA SOT323 |
|
FDC637ANSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 6.2A SUPERSOT6 |
|
SIUD402ED-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 1A PPAK 0806 |
|
IPLK60R1K0PFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 5.2A THIN-PAK |
|
2N6660Roving Networks / Microchip Technology |
MOSFET N-CH 60V 410MA TO39 |
|
NP60N055VUK-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 60A TO252-3 |
|
IPW65R190CFDFKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A TO247-3 |
|
DMN63D8LW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 380MA SOT323 |
|
AUIRF3315SRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
SSM3K341TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 6A UFM |
|
AOD2922Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 3.5A/7A TO252 |
