类型 | 描述 |
---|---|
系列: | SuperMESH3™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 10A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1Ohm @ 3.6A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 42 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1180 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 150W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SIHP21N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO220AB |
|
IRLML2502TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 4.2A SOT23 |
|
RE1C002UNTCLROHM Semiconductor |
MOSFET N-CH 20V 200MA EMT3F |
|
FDU6612ARochester Electronics |
MOSFET N-CH 30V 9.5A/30A IPAK |
|
FCPF360N65S3R0LRochester Electronics |
MOSFET N-CH 650V 10A TO220F-3 |
|
DMP3017SFGQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 11.5A PWRDI3333 |
|
SQP90P06-07L_GE3Vishay / Siliconix |
MOSFET P-CH 60V 120A TO220AB |
|
SIHFPS40N60K-GE3Vishay / Siliconix |
POWER MOSFET SUPER-247, 130 M @ |
|
SI3851DV-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 1.6A 6TSOP |
|
R6006ANXROHM Semiconductor |
MOSFET N-CH 600V 6A TO220FM |
|
IRLR014TRPBFVishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
|
FDP20N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 20A TO220-3 |
|
DMP2077UCA3-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4A X4-DSN1006-3 |