类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 12A (Ta), 54A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 11mOhm @ 12A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 23 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1443 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 3.1W (Ta), 68W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-PDFN (5x6) |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
XPH4R714MC,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 60A 8SOP |
![]() |
FDS8672SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18A 8SOIC |
![]() |
FQI12N60TURochester Electronics |
MOSFET N-CH 600V 10.5A I2PAK |
![]() |
DMT3009UFVW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 10.6A/30A PWRDI |
![]() |
SSS10N60BRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
STD6N95K5STMicroelectronics |
MOSFET N-CH 950V 9A DPAK |
![]() |
IRF5210LPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 38A TO262 |
![]() |
IRFS4310TRRPBFRochester Electronics |
MOSFET N-CH 100V 130A TO263-3-2 |
![]() |
SIR186DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |
![]() |
SI8808DB-T2-E1Vishay / Siliconix |
MOSFET N-CH 30V 4MICROFOOT |
![]() |
AO7401Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 1.4A SC70-3 |
![]() |
PSMN165-200K,518Nexperia |
MOSFET N-CH 200V 2.9A 8SO |
![]() |
PSMN011-60MSXNexperia |
MOSFET N-CH 60V 61A LFPAK33 |