类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STD6N95K5STMicroelectronics |
MOSFET N-CH 950V 9A DPAK |
|
IRF5210LPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 38A TO262 |
|
IRFS4310TRRPBFRochester Electronics |
MOSFET N-CH 100V 130A TO263-3-2 |
|
SIR186DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |
|
SI8808DB-T2-E1Vishay / Siliconix |
MOSFET N-CH 30V 4MICROFOOT |
|
AO7401Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 1.4A SC70-3 |
|
PSMN165-200K,518Nexperia |
MOSFET N-CH 200V 2.9A 8SO |
|
PSMN011-60MSXNexperia |
MOSFET N-CH 60V 61A LFPAK33 |
|
NTMFS5C404NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 52A/370A 5DFN |
|
RQ3E130BNTBROHM Semiconductor |
MOSFET N-CH 30V 13A 8HSMT |
|
AUIRL7736M2TRRochester Electronics |
MOSFET N-CH 40V 179A DIRECTFET |
|
SIHF640S-GE3Vishay / Siliconix |
MOSFET N-CH 200V 18A D2PAK |
|
STI6N90K5STMicroelectronics |
MOSFET N-CH 900V 6A I2PAK |