English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 179A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 3mOhm @ 67A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 150µA |
| 栅极电荷 (qg) (max) @ vgs: | 78 nC @ 4.5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 5.055 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 63W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DIRECTFET™ M4 |
| 包/箱: | DirectFET™ Isometric M4 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIHF640S-GE3Vishay / Siliconix |
MOSFET N-CH 200V 18A D2PAK |
|
STI6N90K5STMicroelectronics |
MOSFET N-CH 900V 6A I2PAK |
|
STP7NK80ZFPSTMicroelectronics |
MOSFET N-CH 800V 5.2A TO220FP |
|
IPB60R199CPAATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 16A D2PAK |
|
FCP104N60FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 37A TO220-3 |
|
NTD4969N-35GRochester Electronics |
MOSFET N-CH 30V 9.4A/41A IPAK |
|
TJ15S06M3L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 15A DPAK |
|
PH3830L,115Rochester Electronics |
MOSFET N-CH 30V 98A LFPAK56 |
|
MMBF2202PT1GRochester Electronics |
MOSFET P-CH 20V 300MA SC70-3 |
|
TP2535N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 350V 86MA TO92-3 |
|
IXFH60N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 60A TO247AD |
|
APT8052BFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 15A TO247 |
|
IPA80R1K4CEXKSA2IR (Infineon Technologies) |
MOSFET N-CH 800V 3.9A TO220 |
