English
简体中文
MOSFET N-CH 500V 19A LPTS
MOSFET N-CH 800V 15A TO247
BOX PLSTC GRAY/CLR 9.09"LX4.92"W
SENSOR 100PSIS 9/16 UNF 5V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 15A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 520mOhm @ 7.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 75 nC @ 10 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 2035 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 [B] |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPA80R1K4CEXKSA2IR (Infineon Technologies) |
MOSFET N-CH 800V 3.9A TO220 |
|
FCU900N60ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 4.5A IPAK |
|
NTMSD6N303R2Rochester Electronics |
MOSFET N-CH 30V 6A 8SOIC |
|
RCJ120N20TLROHM Semiconductor |
MOSFET N-CH 200V 12A LPTS |
|
STD11N50M2STMicroelectronics |
MOSFET N-CH 500V 8A DPAK |
|
IRF9Z34STRLPBFVishay / Siliconix |
MOSFET P-CH 60V 18A D2PAK |
|
IXTP86N20X4Wickmann / Littelfuse |
MOSFET 200V 86A N-CH ULTRA TO220 |
|
FKI07174Sanken Electric Co., Ltd. |
MOSFET N-CH 75V 31A TO220F |
|
CSD17501Q5ATexas Instruments |
MOSFET N-CH 30V 100A 8VSON |
|
R8008ANJFRGTLROHM Semiconductor |
MOSFET N-CH 800V 8A LPTS |
|
RQ6L020SPTCRROHM Semiconductor |
MOSFET P-CH 60V 2A TSMT6 |
|
STU6N65K3STMicroelectronics |
MOSFET N-CH 650V 5.4A IPAK |
|
CSD15571Q2Texas Instruments |
MOSFET N-CH 20V 22A 6SON |