English
简体中文
FIXED IND 33UH 1.2A 196.3 MOHM
P-CHANNEL, SINGLE ENHANCEMENT MO
FXM MODULE 24-FIBER
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 50mA |
| 驱动电压（最大 rds on，最小 rds on）: | 20V |
| rds on (max) @ id, vgs: | 300Ohm @ 100µA, 20V |
| vgs(th) (最大值) @ id: | 5V @ 10µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | -6.5V |
| 输入电容 (ciss) (max) @ vds: | 3.5 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | Surface Mount |
| 供应商设备包: | Die |
| 包/箱: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RJU003N03T106ROHM Semiconductor |
MOSFET N-CH 30V 300MA UMT3 |
|
SI1469DH-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 2.7A SC70-6 |
|
FDMS8670Rochester Electronics |
MOSFET N-CH 30V 24A/42A 8PQFN |
|
DMS3014SFGQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 9.5A PWRDI3333-8 |
|
STU4N80K5STMicroelectronics |
MOSFET N-CH 800V 3A IPAK |
|
NDB6060LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 48A D2PAK |
|
NTMFS4936NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11.6A/79A 5DFN |
|
IPD30N06S2L23ATMA3IR (Infineon Technologies) |
MOSFET N-CH 55V 30A TO252-31 |
|
IPP77N06S212AKSA1Rochester Electronics |
MOSFET N-CH 55V 77A TO220-3-1 |
|
SI8483DB-T2-E1Vishay / Siliconix |
MOSFET P-CH 12V 16A 6MICRO FOOT |
|
STW20NK50ZSTMicroelectronics |
MOSFET N-CH 500V 17A TO247-3 |
|
STFI15N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 11A I2PAKFP |
|
SI4427BDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 9.7A 8SO |