English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFBE30SPBFVishay / Siliconix |
MOSFET N-CH 800V 4.1A D2PAK |
|
DMT10H015LCG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 9.4A/34A 8DFN |
|
IRF100B201IR (Infineon Technologies) |
MOSFET N-CH 100V 192A TO220AB |
|
BSP179H6327XTSA1Rochester Electronics |
MOSFET N-CH 400V 210MA SOT223-4 |
|
RJK0656DPB-00#J5Renesas Electronics America |
MOSFET N-CH 60V 40A LFPAK |
|
SIHA100N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 30A TO220 |
|
FCPF150N65FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 14.9A TO220F |
|
AOTF6N90Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 900V 6A TO220-3F |
|
NTB6412ANGRochester Electronics |
MOSFET N-CH 100V 58A D2PAK |
|
DMT6015LFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V PWRDI3333 |
|
EPC2204EPC |
TRANS GAN 100V DIE 5.6MOHM |
|
GKI10194Sanken Electric Co., Ltd. |
MOSFET N-CH 100V 7A 8DFN |
|
FDB14N30TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 300V 14A D2PAK |
