类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 35A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 4.8mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 41 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1600 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 4.2W (Ta), 36W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® SO-8 |
包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IRFW640BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
FQPF5N50CYDTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 5A TO220F-3 |
![]() |
IRFS4510TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 61A D2PAK |
![]() |
NTD95N02R-001Rochester Electronics |
MOSFET N-CH 24V 12A/32A IPAK |
![]() |
NTD4809NA-1GRochester Electronics |
MOSFET N-CH 30V 9.6A/58A IPAK |
![]() |
FDP045N10ARochester Electronics |
120A, 100V, 0.0045OHM, N CHANNEL |
![]() |
SIRA00DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 100A PPAK SO-8 |
![]() |
BSL716SNH6327XTSA1Rochester Electronics |
MOSFET N-CH 75V 2.5A TSOP6-6 |
![]() |
SIR870BDP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 100V 18.8A/81A PPAK |
![]() |
RFD14N05LSM9ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 14A TO252AA |
![]() |
AON6240Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 27A/85A 8DFN |
![]() |
IXFB210N20PWickmann / Littelfuse |
MOSFET N-CH 200V 210A PLUS264 |
![]() |
FCP7N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7A TO220-3 |