English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® Gen IV |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 45.3A (Ta), 169A(Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 1.35mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 162 nC @ 10 V |
| vgs (最大值): | +20V, -16V |
| 输入电容 (ciss) (max) @ vds: | 7800 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 5W (Ta), 69.4W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTMFS4935NCT1GRochester Electronics |
MOSFET N-CH 30V 13A/93A 5DFN |
|
IPS65R1K0CEAKMA1Rochester Electronics |
MOSFET N-CH 650V 4.3A TO251 |
|
IXTA48N20TWickmann / Littelfuse |
MOSFET N-CH 200V 48A TO263 |
|
SPB04N50C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTR5198NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 1.7A SOT23-3 |
|
DMG6402LDM-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 5.3A SOT26 |
|
CPC5602CTRWickmann / Littelfuse |
MOSFET N-CH 350V 5MA SOT-223 |
|
ZVN2110AZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 320MA TO92-3 |
|
STB11N52K3STMicroelectronics |
MOSFET N-CH 525V 10A D2PAK |
|
NTMFS4923NET1GRochester Electronics |
MOSFET N-CH 30V 12.7A/91A 5DFN |
|
STD40P8F6AGSTMicroelectronics |
MOSFET P-CH 80V DPAK |
|
STP28NM60NDSTMicroelectronics |
MOSFET N-CH 600V 23A TO220 |
|
SUD50P04-08-GE3Vishay / Siliconix |
MOSFET P-CH 40V 50A TO252 |
