类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 15A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 6.1mOhm @ 15A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 15.3 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 850 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 2W (Ta), 17.2W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-HSMT (3.2x3) |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SSM6J216FE,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CHANNEL 12V 4.8A ES6 |
|
AOL1454GAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 25A/46A ULTRASO8 |
|
SPS04N60C3BKMA1Rochester Electronics |
MOSFET N-CH 650V 4.5A TO251-3 |
|
SUM90N03-2M2P-E3Vishay / Siliconix |
MOSFET N-CH 30V 90A TO263 |
|
SIR492DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 40A PPAK SO-8 |
|
IRF3205ZSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 75A D2PAK |
|
IPC60N04S406ATMA1Rochester Electronics |
MOSFET N-CH 40V 60A TDSON-8-23 |
|
STF100N10F7STMicroelectronics |
MOSFET N CH 100V 45A TO-220FP |
|
SIHG47N60AEF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 40A TO247AC |
|
IRLZ24NSPBFRochester Electronics |
MOSFET N-CH 55V 18A D2PAK |
|
RQ1C075UNTRROHM Semiconductor |
MOSFET N-CH 20V 7.5A TSMT8 |
|
STF80N10F7STMicroelectronics |
MOSFET N-CH 100V 40A TO220FP |
|
DMN3025LFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 9.9A 6UDFN |