English
简体中文
BJT SOT-23 45V 800MA
MOSFET N-CH 100V 73A D2PAK
CONN HEADER VERT 16POS 2.54MM
IC REG LINEAR 5.5V 75MA SOT23-5
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 73A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 14mOhm @ 44A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 140 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3550 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 190W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RFD8P05SMRochester Electronics |
MOSFET P-CH 50V 8A TO252AA |
|
NVB6411ANT4GRochester Electronics |
MOSFET N-CH 100V 77A D2PAK-3 |
|
DMP6023LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 7.7A PWRDI3333-8 |
|
BSS138BKVLNexperia |
MOSFET N-CH 60V 360MA TO236AB |
|
IRFR014PBF-BE3Vishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
|
STP10NK80ZFPSTMicroelectronics |
MOSFET N-CH 800V 9A TO220FP |
|
NVMFS5C638NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 26A/133A 5DFN |
|
STP28NM50NSTMicroelectronics |
MOSFET N-CH 500V 21A TO220AB |
|
IPB80N06S209ATMA1Rochester Electronics |
MOSFET N-CH 55V 80A TO263-3-2 |
|
IRFR1205TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 44A DPAK |
|
TPH3R704PC,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 82A 8SOP |
|
DMP2045UFY4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.7A X2-DFN2015 |
|
RU1C001UNTCLROHM Semiconductor |
MOSFET N-CH 20V 100MA UMT3F |