类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 7.7A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 25mOhm @ 5A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 53.1 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2569 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 1W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerDI3333-8 |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSS138BKVLNexperia |
MOSFET N-CH 60V 360MA TO236AB |
|
IRFR014PBF-BE3Vishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
|
STP10NK80ZFPSTMicroelectronics |
MOSFET N-CH 800V 9A TO220FP |
|
NVMFS5C638NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 26A/133A 5DFN |
|
STP28NM50NSTMicroelectronics |
MOSFET N-CH 500V 21A TO220AB |
|
IPB80N06S209ATMA1Rochester Electronics |
MOSFET N-CH 55V 80A TO263-3-2 |
|
IRFR1205TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 44A DPAK |
|
TPH3R704PC,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 82A 8SOP |
|
DMP2045UFY4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.7A X2-DFN2015 |
|
RU1C001UNTCLROHM Semiconductor |
MOSFET N-CH 20V 100MA UMT3F |
|
FDS3672Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 7.5A 8SOIC |
|
PMV160UP,215Nexperia |
MOSFET P-CH 20V 1.2A TO236AB |
|
FQPF8N60CFTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 6.26A TO220F |