English
简体中文
CRYSTAL 30.0000MHZ 8PF SMD
MOSFET N-CH 30V 12A SOT28FL/ECH8
MOSFET N-CH 20V 7.9A 6UDFN
IC REG LINEAR 3.8V 50MA SOT89-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7.9A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 25mOhm @ 4A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18 nC @ 8 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 907 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 660mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | U-DFN2020-6 (Type F) |
| 包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
UPA2762UGR-E1-ATRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFR1018EPBF-INFRochester Electronics |
HEXFET POWER MOSFET |
|
FDS5351Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 6.1A 8SOIC |
|
PSMN012-25YLC,115Rochester Electronics |
MOSFET N-CH 25V 33A LFPAK56 |
|
FCP190N65S3Rochester Electronics |
POWER MOSFET, N-CHANNEL, SUPERFE |
|
RV8L002SNHZGG2CRROHM Semiconductor |
MOSFET N-CH 60V 250MA DFN1010-3W |
|
R6009JNJGTLROHM Semiconductor |
MOSFET N-CH 600V 9A LPTS |
|
R6009JNXC7GROHM Semiconductor |
MOSFET N-CH 600V 9A TO220FM |
|
IXFB40N110PWickmann / Littelfuse |
MOSFET N-CH 1100V 40A PLUS264 |
|
BTS112ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK3573-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT34F100B2Roving Networks / Microchip Technology |
MOSFET N-CH 1000V 35A T-MAX |
|
AON6282Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 80V 26.5A/85A 8DFN |