English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.9A (Ta), 8.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 122mOhm @ 3.3A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 14.9 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 870.7 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 940mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerDI3333-8 |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SISH615ADN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 22.1A/35A PPAK |
|
RM180N60T2Rectron USA |
MOSFET N-CH 60V 180A TO220-3 |
|
R5021ANJTLROHM Semiconductor |
MOSFET N-CH 500V 21A LPTS |
|
XP233P1501TR-GTorex Semiconductor Ltd. |
MOSFET P-CH 30V 1.5A SOT23 |
|
PSMN3R9-60XS127Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
DMN80H2D0SCTIZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 800V 7A ITO220AB |
|
SQJ465EP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 60V 8A PPAK SO-8 |
|
NTD4970N-35GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.5A/36A IPAK |
|
NTTFS4937NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11A/75A 8WDFN |
|
MCB150N06YB-TPMicro Commercial Components (MCC) |
MOSFET N-CH 60V 150A D2PAK |
|
RM20N150LDRectron USA |
MOSFET N-CH 150V 20A TO252-2 |
|
IRFS4321TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 150V 86A D2PAK-7 |
|
FQP6N40CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 6A TO220-3 |
