English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 52mOhm @ 2A, 4V |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | 6 nC @ 4 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 400 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1W (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 3-MCPH |
| 包/箱: | 3-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RF1K4909396Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
NVMFS5C646NLAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A/93A 5DFN |
|
STW4N150STMicroelectronics |
MOSFET N-CH 1500V 4A TO247-3 |
|
IPP60R210CFD7XKSA1IR (Infineon Technologies) |
MOSFET N CH |
|
FQAF10N80Rochester Electronics |
MOSFET N-CH 800V 6.7A TO3PF |
|
IXFA10N80PWickmann / Littelfuse |
MOSFET N-CH 800V 10A TO263 |
|
IPW60R199CPRochester Electronics |
16A, 600V, 0.199OHM, N-CHANNEL M |
|
SISH536DN-T1-GE3Vishay / Siliconix |
N-CHANNEL 30 V (D-S) MOSFET POWE |
|
IRFZ44RPBFVishay / Siliconix |
MOSFET N-CH 60V 50A TO220AB |
|
BSC0901NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 28A/100A TDSON |
|
IPAN65R650CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10.1A TO220 |
|
AUIRFR5505-IRRochester Electronics |
PFET, 18A I(D), 55V, 0.11OHM, 1O |
|
IRFPS38N60LPBFVishay / Siliconix |
MOSFET N-CH 600V 38A SUPER247 |
