类型 | 描述 |
---|---|
系列: | U-MOSVI |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 6A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.5V, 4.5V |
rds on (max) @ id, vgs: | 23.1mOhm @ 4A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 24.8 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 1800 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 1W (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 6-UDFNB (2x2) |
包/箱: | 6-WDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSZ013NE2LS5IATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 32A/40A TSDSON |
|
AUIRFZ48NRochester Electronics |
MOSFET N-CH 55V 69A TO220AB |
|
IRFP22N60KPBFVishay / Siliconix |
MOSFET N-CH 600V 22A TO247-3 |
|
ZXMN6A11GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 3.1A SOT223 |
|
IPL60R360P6SATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 11.3A 8THINPAK |
|
FDPF770N15ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 10A TO220F |
|
RQ6E085BNTCRROHM Semiconductor |
MOSFET N-CH 30V 8.5A SOT457 |
|
IRF840ALPBFVishay / Siliconix |
MOSFET N-CH 500V 8A I2PAK |
|
BUK7905-40AI,127Rochester Electronics |
PFET, 75A I(D), 40V, 0.005OHM, 1 |
|
NTB75N03RT4Rochester Electronics |
MOSFET N-CH 25V 9.7A/75A D2PAK |
|
FDMC86102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 7A/20A POWER33 |
|
IRF7853TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 8.3A 8SO |
|
EPC2045EPC |
GANFET N-CH 100V 16A DIE |