English
简体中文
LED MT SR VERT X 0.620" 3MM 2LD
MEMS OSC XO 20.0000MHZ H/LV-CMOS
MOSFET P-CH 45V 8A TO252
AUTO MULTI-CHANNEL HALF BRIDGER
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 45 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 10V |
| rds on (max) @ id, vgs: | 91mOhm @ 8A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 9 nC @ 5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1000 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 15W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252 |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RJK4532DPD-00#J2Renesas Electronics America |
MOSFET N-CH 450V 4A MP3A |
|
FDC610PZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 4.9A SUPERSOT6 |
|
AUIRFR8401TRLIR (Infineon Technologies) |
MOSFET N-CH 40V 100A DPAK |
|
SI7806ADN-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 9A PPAK1212-8 |
|
SIHB21N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 17.4A D2PAK |
|
IPB180N03S4L-01Rochester Electronics |
IPB180N03 - 20V-40V N-CHANNEL AU |
|
RQ3E180BNTBROHM Semiconductor |
MOSFET N-CHANNEL 30V 39A 8HSMT |
|
NVMFS5C604NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 40A/287A 5DFN |
|
FDMS86368-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 80A POWER56 |
|
EKI10126Sanken Electric Co., Ltd. |
MOSFET N-CH 100V 66A TO220-3 |
|
DMT10H015LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 7.3A PWRDI5060 |
|
FDS7064N7Rochester Electronics |
MOSFET N-CH 30V 16.5A 8SO |
|
IPI120N06S402AKSA2Rochester Electronics |
MOSFET N-CH 60V 120A TO262-3-1 |