类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Discontinued at Digi-Key |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 40A (Ta), 287A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 1.2mOhm @ 50A, 10V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 120 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 8900 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.9W (Ta), 200W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 5-DFN (5x6) (8-SOFL) |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDMS86368-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 80A POWER56 |
|
EKI10126Sanken Electric Co., Ltd. |
MOSFET N-CH 100V 66A TO220-3 |
|
DMT10H015LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 7.3A PWRDI5060 |
|
FDS7064N7Rochester Electronics |
MOSFET N-CH 30V 16.5A 8SO |
|
IPI120N06S402AKSA2Rochester Electronics |
MOSFET N-CH 60V 120A TO262-3-1 |
|
SQM120P10_10M1LGE3Vishay / Siliconix |
MOSFET P-CH 100V 120A TO263 |
|
NTMFS5C450NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 27A/110A 5DFN |
|
MGSF1N02LT1GRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
NVMFS4841NWFT1GRochester Electronics |
MOSFET N-CH 30V 16A 5DFN |
|
TPH3212PSTransphorm |
GANFET N-CH 650V 27A TO220AB |
|
2SK3635-Z-E1-AZRochester Electronics |
MOSFET N-CH 200V 8A TO252 |
|
FQD3N60TFRochester Electronics |
MOSFET N-CH 600V 2.4A DPAK |
|
FQH18N50V2Rochester Electronics |
MOSFET N-CH 500V 20A TO247-3 |