类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTMSD3P102R2Rochester Electronics |
MOSFET P-CH 20V 2.34A 8SOIC |
|
STL285N4F7AGSTMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT |
|
DMTH10H005SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 140A TO220AB |
|
FCI7N60Rochester Electronics |
MOSFET N-CH 600V 7A I2PAK |
|
IRLR110TRPBFVishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
DMG2302UKQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 2.8A SOT23 T&R 3 |
|
IRFU5505PBFIR (Infineon Technologies) |
MOSFET P-CH 55V 18A IPAK |
|
TSM60NB1R4CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 3A TO251 |
|
AUIRFS8409Rochester Electronics |
MOSFET N-CH 40V 195A D2PAK |
|
STL135N8F7AGSTMicroelectronics |
MOSFET N-CH 80V 130A POWERFLAT |
|
SIHB22N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A D2PAK |
|
PMPB10XNE,115Nexperia |
MOSFET N-CH 20V 9A DFN2020MD-6 |
|
NVR4003NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 500MA SOT23 |