FIXED IND 150UH 850MA 680 MOHM
MOSFET N-CH 600V 18A TO247-4
类型 | 描述 |
---|---|
系列: | CoolMOS™ P7 |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 18A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 180mOhm @ 5.6A, 10V |
vgs(th) (最大值) @ id: | 4V @ 280µA |
栅极电荷 (qg) (max) @ vgs: | 25 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1.081 pF @ 400 V |
场效应管特征: | - |
功耗(最大值): | 72W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO247-4 |
包/箱: | TO-247-4 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BUK7510-55AL127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFP054PBFVishay / Siliconix |
MOSFET N-CH 60V 70A TO247-3 |
|
SIHP065N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 40A TO220AB |
|
SI8497DB-T2-E1Vishay / Siliconix |
MOSFET P-CH 30V 13A 6MICROFOOT |
|
TSM650P02CX RFGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 20V 4.1A SOT23 |
|
RM6N800T2Rectron USA |
MOSFET N-CHANNEL 800V 6A TO220-3 |
|
FDU8896_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVMYS014N06CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 12A/36A 4LFPAK |
|
IXFN44N100Q3Wickmann / Littelfuse |
MOSFET N-CH 1000V 38A SOT227B |
|
AOTF8N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 8A TO220-3F |
|
IRL640ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 18A TO220-3 |
|
IRF830Rochester Electronics |
MOSFET N-CH 500V 4.5A TO220-3 |
|
IRF9333TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 9.2A 8SO |