English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9.2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 19.4mOhm @ 9.2A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 25µA |
| 栅极电荷 (qg) (max) @ vgs: | 38 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1110 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SCTH35N65G2V-7AGSTMicroelectronics |
SICFET N-CH 650V 45A H2PAK-7 |
|
IPP80N06S209AKSA1Rochester Electronics |
MOSFET N-CH 55V 80A TO220-3-1 |
|
IPP070N08N3GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHB8N50D-GE3Vishay / Siliconix |
MOSFET N-CH 500V 8.7A TO263 |
|
FCH085N80-F155Rochester Electronics |
MOSFET N-CH 800V 46A TO247 |
|
IXFA5N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 5A TO263 |
|
AOTF5N100Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 1000V 4A TO220-3F |
|
FQB6N80TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 5.8A D2PAK |
|
RHP020N06T100ROHM Semiconductor |
MOSFET N-CH 60V 2A MPT3 |
|
FDMA6676PZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 11A 6MICROFET |
|
TK10Q60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 9.7A IPAK |
|
PSMN5R3-25MLDXRochester Electronics |
PSMN5R3-25MLD - N-CHANNEL 25V, L |
|
HUF76121S3STRochester Electronics |
N-CHANNEL POWER MOSFET |
