类型 | 描述 |
---|---|
系列: | PowerTrench® |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 80 V |
电流 - 连续漏极 (id) @ 25°c: | 240A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 8V, 10V |
rds on (max) @ id, vgs: | 2.2mOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 200 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 15.4 pF @ 40 V |
场效应管特征: | - |
功耗(最大值): | 3.8W (Ta), 214W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-263-7 |
包/箱: | TO-263-7, D²Pak (6 Leads + Tab) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IRFZ24STRRPBFVishay / Siliconix |
MOSFET N-CH 60V 17A TO263 |
![]() |
IPW90R1K0C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
SIUD406ED-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 500MA PPAK 0806 |
![]() |
RFD20N03SMRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
SIHF7N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 7A TO220 |
![]() |
AOI4185Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 40V 40A TO251A |
![]() |
NTHL082N65S3FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 40A TO247-3 |
![]() |
FDP8876Rochester Electronics |
MOSFET N-CH 30V 70A TO220-3 |
![]() |
STU8N80K5STMicroelectronics |
MOSFET N-CH 800V 6A TO251 |
![]() |
STFW42N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 34A ISOWATT |
![]() |
IPW65R280C6Rochester Electronics |
650 V COOLMOS E6 POWER MOSFET |
![]() |
SQP120N06-6M7_GE3Vishay / Siliconix |
MOSFET N-CH 60V TO220AB |
![]() |
IRF133Rochester Electronics |
N-CHANNEL POWER MOSFET |