English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.3mOhm @ 75A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 290 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 7960 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-262 |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AOC2412Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 20V 4.5A 4ALPHADFN |
|
IRF740ASTRLVishay / Siliconix |
MOSFET N-CH 400V 10A D2PAK |
|
IRF7452IR (Infineon Technologies) |
MOSFET N-CH 100V 4.5A 8SO |
|
IPW90R120C3FKSA1IR (Infineon Technologies) |
MOSFET N-CH 900V 36A TO247-3 |
|
IRF610STRRVishay / Siliconix |
MOSFET N-CH 200V 3.3A D2PAK |
|
DMG4N60SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 600V 3.7A TO252 T&R |
|
IRL3716LPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 180A TO262 |
|
TPC8038-H(TE12L,Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 12A 8SOP |
|
STB70NFS03LT4STMicroelectronics |
MOSFET N-CH 30V 70A D2PAK |
|
BSP295E6327IR (Infineon Technologies) |
MOSFET N-CH 60V 1.8A SOT223-4 |
|
FQD10N20TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 7.6A DPAK |
|
BSP295E6327TIR (Infineon Technologies) |
MOSFET N-CH 60V 1.8A SOT223-4 |
|
IRFU224Vishay / Siliconix |
MOSFET N-CH 250V 3.8A TO251AA |
