类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 7.8A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 14mOhm @ 7.8A, 10V |
vgs(th) (最大值) @ id: | 1V @ 250µA (Min) |
栅极电荷 (qg) (max) @ vgs: | 33 nC @ 5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | 1.5W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-TSSOP |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ZVN3310ASTOBZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 200MA E-LINE |
|
SPI12N50C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 11.6A TO262-3 |
|
AON4420Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 10A 8DFN |
|
HAT2279H-EL-ERenesas Electronics America |
MOSFET N-CH 80V 30A LFPAK |
|
RRS125N03TB1ROHM Semiconductor |
MOSFET N-CH 30V 12.5A 8SOP |
|
BUK7Y12-80EXNexperia |
MOSFET N-CH 80V LFPAK56 PWR-SO8 |
|
IRF7433PBFIR (Infineon Technologies) |
MOSFET P-CH 12V 8.9A 8SO |
|
IRF7201TRIR (Infineon Technologies) |
MOSFET N-CH 30V 7.3A 8SO |
|
STD100N03LT4STMicroelectronics |
MOSFET N-CH 30V 80A DPAK |
|
FDS2672-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 3.9A 8SOIC |
|
IXFN48N50U3Wickmann / Littelfuse |
MOSFET N-CH 500V 48A SOT-227B |
|
IPB80N06S3L-05IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO263-3 |
|
IRLR3714ZTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 37A DPAK |